Ara
Toplam kayıt 7, listelenen: 1-7
The The validity of Kohlrausch law for the photocurrent transient and the role of N-2/Ar flow ratio in photoconductivity of sputtered CoZnO
(Elsevier Science Sa, 2017)
Co:ZnO (CZnO) ferromagnetic semiconductor layers are coated on the surface of glass and Si substrates by Magnetron Sputter Deposition Method (MSDM) with variable N-2/Ar gas flow ratio. N-2/Ar flow ratio varies from 5 sccm ...
Ti doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications
(Elsevier Science Bv, 2018)
Electrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current voltage (I-V) characteristics of the ...
Structural and optoelectronic characterization of Cu 2 CoSnS 4 quaternary functional photodetectors
(Elsevier Gmbh, 2020)
[Abstract Not Available]
Optoelectrical properties of Al/p-Si/Fe:N doped ZnO/Al diodes
(Elsevier Science Sa, 2018)
In this work, 3% Fe doped zinc oxide (ZnO) doped by Nitrogen thin films were grown by reactive radio frequency magnetron sputtering on p-Si substrates. The structural and optical properties of the 3% Fe doped ZnO doped by ...
Optical, Electrical and Photoresponsive Properties of Cu2NiSnS4 Solar Detectors
(Springer, 2020)
Sol-gel methods were used to fabricate Al/p-Si/Cu2NiSnS4/Al quaternary functional solar detectors. Diffraction, spectroscopy and microscopy were used for the structural characterization of the photodetectors. The bandgap ...
Graphene Oxide/Poly(3-hexylthiophene) Nanocomposite Thin-Film Phototransistor for Logic Circuit Applications
(Springer, 2018)
Graphene is a sheet-structured material that lacks a forbidden band, being a good candidate for use in radiofrequency applications. We have elaborated graphene-oxide-doped poly(3-hexylthiophene) nanocomposite to increase ...
Electrical characterization of solar sensitive zinc oxide doped-amorphous carbon photodiode
(Elsevier Gmbh, 2019)
A new solar-sensitive zinc oxide doped-amorphous carbon diode was fabricated using the electrochemical deposition technique. The current-voltage characteristics of the fabricated Al/ZnO-a:C/p-Si/Al diode were investigated ...