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Toplam kayıt 3, listelenen: 1-3
Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD
(Springer, 2011)
An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ...
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
(Pleiades Publishing Inc, 2011)
The aim of this study, to explain effects of the SiO2 insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 ) and thick (250 ) SiO2 insulator layers were deposited on ...
Structural investigation and electronic band transitions of nanostructured TiO2 thin films
(Wiley-V C H Verlag Gmbh, 2011)
Titanium dioxide (TiO2) thin film was deposited on n-Si (100) substrate by reactive DC magnetron sputtering system at 250 degrees C temperature. The deposited film was thermally treated for 3 h in the range of 400-1000 ...