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Toplam kayıt 3, listelenen: 1-3
Wet-chemical etching of GaAs(211)B wafers for controlling the surface properties
(Inderscience Enterprises Ltd, 2019)
Substrate surface plays an important role to achieve high performance infrared devices and high-quality film layers. GaAs (211)B wafers were intensively used in infrared detector applications. Despite 'epiready' wafers can ...
Structural investigation and electronic band transitions of nanostructured TiO2 thin films
(Wiley-V C H Verlag Gmbh, 2011)
Titanium dioxide (TiO2) thin film was deposited on n-Si (100) substrate by reactive DC magnetron sputtering system at 250 degrees C temperature. The deposited film was thermally treated for 3 h in the range of 400-1000 ...
Size investigation of silicon nanoclusters deposited on HOPG using noncontact atomic force microscopy
(Scientific Technical Research Council Turkey-Tubitak, 2018)
The sizes of silicon nanoparticles produced using two different novel methods are investigated in this report. The method of production used to generate silicon oxide nanoparticles was achieved via gas aggregation codeposition ...