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Toplam kayıt 2, listelenen: 1-2
Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs
(Pleiades Publishing Inc, 2013)
Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The ...
Structural investigation of AlInN/AlN/GaN heterostructures
(Springer, 2016)
AlInN/AlN/GaN high-electron-mobility transistor (HEMT) structures were grown on undoped-GaN-layers/sapphire templates by metal-organic chemical vapor deposition to investigate the properties of HEMTs with various thickness ...