Ara
Toplam kayıt 61, listelenen: 21-30
Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD
(Springer, 2011)
An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ...
Modeling Superionic Behavior of Plutonium Dioxide
(Walter De Gruyter Gmbh, 2016)
The Bredig transition to the superionic phase indicated with the.-peak in C-p was highly expected for plutonium dioxide (PuO2) as other actinide dioxides. However, least-square fit and local smoothing techniques applied ...
Levels of Po-210 and Pb-210 in mussel and sediments in Candarli Gulf and the related dose assessment to the coastal population
(Pergamon-Elsevier Science Ltd, 2013)
Po-210 and Pb-210 in mussel (Mytilus galloprovincialis) and sediment samples collected at Candarli Gulf during the period of 2010-2012 are presented and discussed. The activity concentrations of Po-210 and Pb-210 were ...
New predicted two-dimensional MXenes and their structural, electronic and lattice dynamical properties
(Pergamon-Elsevier Science Ltd, 2019)
MXenes, transition metal carbides and nitrides, are a bourgeoning class of two-dimensional (2D) materials due to their tunable electronic and magnetic structures, rich surface chemistry and thermal stability. Here, we ...
AFM induced self-assembling and self-healing mechanism of silicon oxide nanoparticle linear array domains templated on Moire superlattice patterns on HOPG
(Elsevier Science Bv, 2019)
Silicon oxide nanocluster suspensions were drop-cast on highly oriented pyrolytic graphite (HOPG) and investigated using ultra-high vacuum non-contact atomic force microscopy (AFM). The assembly of silicon oxide nanoparticle ...
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
(Pleiades Publishing Inc, 2011)
The aim of this study, to explain effects of the SiO2 insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 ) and thick (250 ) SiO2 insulator layers were deposited on ...
Ti doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications
(Elsevier Science Bv, 2018)
Electrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current voltage (I-V) characteristics of the ...
Analytical solution of the local fractional Klein-Gordon equation for generalized Hulthen potential
(Scientific Technical Research Council Turkey-Tubitak, 2017)
The one-dimensional Klein Gordon (KG) equation is investigated in the domain of conformable fractional calculus for one-dimensional scalar potential, namely generalized Hulthen potential. The conformable fractional calculus ...
Current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes
(Natl Inst Optoelectronics, 2012)
In this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes (SBDs) have been investigated at room temperature. InGaAs epilayer was grown on (100) oriented ...
Evaluation of X-ray tomography contrast agents: A review of production, protocols, and biological applications
(Wiley, 2019)
X-ray computed tomography is a strong tool that finds many applications both in medical applications and in the investigation of biological and nonbiological samples. In the clinics, X-ray tomography is widely used for ...