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Toplam kayıt 4, listelenen: 1-4
The influence of thickness and ammonia flow rate on the properties of AlN layers
(Elsevier Sci Ltd, 2012)
Undoped AlN layers have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition in order to study the effects of ammonia (NH3) flow rate and layer thickness on the structural quality and surface ...
Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs
(Pleiades Publishing Inc, 2013)
Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The ...
Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD
(Springer, 2011)
An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ...
Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness
(Springer, 2016)
Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force ...