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Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness
(Springer, 2016)
Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force ...