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Toplam kayıt 50, listelenen: 1-10
Modified Li Chains As Atomic Switches
(2013-09-06)
We present electronic structure and transport calculations for hydrogen and lithium chains, using density functional theory and scattering theory on the Green’s function level, to systematically study impurity effects ...
Two-dimensional $Ti_2C$ monolayer (MXene): surface functionalization, induced metal, semiconductor transition
(2019)
Recently, two-dimensional (2D) transition metal carbides and nitrides known as MXenes, have gained a lotof attention because of their tunable electronic and magnetic properties depending on surface functionalization. In ...
Activity levels of Po-210 and Pb-210 in some fish species of the Izmir Bay (Aegean Sea)
(Pergamon-Elsevier Science Ltd, 2013)
Concentrations of Po-210 and Pb-210 were determined in the edible muscle tissue of twelve species of marine fish collected from Izmir Bay in the Aegean Sea Region of Turkey during the 2006-2007. Po-210 activity concentrations ...
Seasonal variation of the concentrations of Cs-137 in sediment, sea water, and some organisms collected from Izmir Bay and Didim
(Taylor & Francis Ltd, 2014)
Cs-137 in the marine environment mainly originates from fallout of atmospheric nuclear weapon tests, accidental releases from nuclear facilities, and from the Chernobyl accident. After the latter accident, many studies ...
Levels of Po-210 in some commercial fish species consumed in the Aegean Sea coast of Turkey and the related dose assessment to the coastal population
(Elsevier Sci Ltd, 2013)
Concentrations of Po-210 were determined in the edible muscle tissue of five species of marine fish: Sardine (Sardine plichardus) and Anchovy (Engraulis encrasicolus), Red mullet (Mullus barbatus), Horse mackerel (Trachurus ...
Current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes
(Natl Inst Optoelectronics, 2012)
In this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes (SBDs) have been investigated at room temperature. InGaAs epilayer was grown on (100) oriented ...
The The validity of Kohlrausch law for the photocurrent transient and the role of N-2/Ar flow ratio in photoconductivity of sputtered CoZnO
(Elsevier Science Sa, 2017)
Co:ZnO (CZnO) ferromagnetic semiconductor layers are coated on the surface of glass and Si substrates by Magnetron Sputter Deposition Method (MSDM) with variable N-2/Ar gas flow ratio. N-2/Ar flow ratio varies from 5 sccm ...
The influence of thickness and ammonia flow rate on the properties of AlN layers
(Elsevier Sci Ltd, 2012)
Undoped AlN layers have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition in order to study the effects of ammonia (NH3) flow rate and layer thickness on the structural quality and surface ...
Wet-chemical etching of GaAs(211)B wafers for controlling the surface properties
(Inderscience Enterprises Ltd, 2019)
Substrate surface plays an important role to achieve high performance infrared devices and high-quality film layers. GaAs (211)B wafers were intensively used in infrared detector applications. Despite 'epiready' wafers can ...
Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness
(Springer, 2016)
Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force ...