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Toplam kayıt 4, listelenen: 1-4
Ti doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications
(Elsevier Science Bv, 2018)
Electrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current voltage (I-V) characteristics of the ...
Structural and optoelectronic characterization of Cu 2 CoSnS 4 quaternary functional photodetectors
(Elsevier Gmbh, 2020)
[Abstract Not Available]
Optical, Electrical and Photoresponsive Properties of Cu2NiSnS4 Solar Detectors
(Springer, 2020)
Sol-gel methods were used to fabricate Al/p-Si/Cu2NiSnS4/Al quaternary functional solar detectors. Diffraction, spectroscopy and microscopy were used for the structural characterization of the photodetectors. The bandgap ...
Electrical characterization of solar sensitive zinc oxide doped-amorphous carbon photodiode
(Elsevier Gmbh, 2019)
A new solar-sensitive zinc oxide doped-amorphous carbon diode was fabricated using the electrochemical deposition technique. The current-voltage characteristics of the fabricated Al/ZnO-a:C/p-Si/Al diode were investigated ...