Konu "X-Ray-Diffraction" için listeleme

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Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

Çörekçi, S.; Öztürk, M. K.; Bengi, A.; Çakmak, M.; Özçelik, S.; Özbay, E. (Springer, 2011)

An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ...
Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD

Öztürk, M. K.; Çörekçi, S.; Tamer, M.; Çetin, S. S.; Özçelik, S.; Özbay, E. (Springer, 2014)

The structural and morphological properties of metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN light-emitting diode (LED) structures with different In content have been studied by high-resolution X-ray ...